1 2 3 4 5 6 sot-363 device shipping ordering information m mbt2907adw1t1 marking 3000 units/reel dual general purpose transistor q 1 q 2 (1) (2) (3) (4) (5) (6) featrues z 2f compliance with rohs requirements. we declare that the material of product maximum ratings rating symbol 2907 2907a unit collectorCemitter voltage v ceo C40 C60 vdc collectorCbase voltage v cbo C60 vdc emitterCbase voltage v ebo C5.0 vdc collector current continuous i c C600 madc value thermal characteristics characteristic unit total device dissipation frC 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg C55 to +150 c device marking m mbt2907a dw1t1 = 2f symbol max electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage(3) v (br)ceo vdc (i c = C10 madc, i b = 0) m mbt2907 C40 m mbt2907a C60 collectorCemitter breakdown voltage(i c = C10 adc, i e = 0) v (br)cbo C60 vdc emitterCbase breakdown voltage(i e = C10 adc, i c = 0) v (br)ebo C5.0 vdc collector cutoff current( v cb = C30vdc, i be(off) = C0.5vdc) i cex C50 nadc collector cutoff current i cbo adc ( v cb = C50vdc, i e = 0) m mbt2907 C0.020 m mbt2907a C0.010 ( v cb = C50vdc, i e = 0, t a =125c ) m mbt2907 C20 m mbt2907a C10 base current( v ce = C30vdc, v eb(off) = C0.5vdc ) i b C50 nadc 1. frC5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2012- 0 willas electronic corp. MMBT2907ADW1T1 z
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe CC (i c = C0.1madc, v ce = C10 vdc) m mbt2907 35 CC m mbt2907a 75 CC (i c =C1.0madc, v ce = C10 vdc) m mbt2907 50 CC m mbt2907a 100 CC (i c = C10 madc, v ce = C10vdc) m mbt2907 75 CC m mbt2907a 100 CC (i c = C150madc, v ce =C10 vdc)(3) m mbt2907 CC CC m mbt2907a 100 300 (i c = C500madc, v ce =C10 vdc)(3) m mbt2907 30 CC m mbt2907a 50 CC collectorCemitter saturation voltage(3) v ce(sat) vdc (i c = C150madc, i b = C15 madc) CC C0.4 (i c = C500 madc, i b = C50 madc) CC C1.6 baseCemitter saturation voltage(3) v be(sat) vdc (i c = C150madc, i b = C15 madc) CC C1.3 (i c = C500madc, i b = C50 madc) CC C2.6 smallCsignal characteristics currentCgain bandwidth product(3),(4) f t 200 CC mhz (i c = C50madc, v ce = C20vdc, f = 100mhz) output capacitance (v cb = C10 vdc, i e = 0, f = 1.0 mhz) c obo CC 8.0 pf input capacitance c ibo CC 30 pf (v eb = C2.0vdc, i c = 0, f = 1.0 mhz) switching characteristics turnCon time (v cc = C30 vdc, t on 45 delay time i c = C150 madc, i b1 = C15 madc) t d 10ns rise time t r 40 fall time (v cc = C6.0 vdc, t f 30 storage time i c = C150 madc,i b1 = i b2 = 15 madc) t s 80ns turnCoff time t off 100 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 4. f t is defined as the frequency at which |h f e | extrapolates to unity. figure 1. delay and rise time test circuit 0 0 C16 v 200 ns 50 1.0 k 200 C30 v to oscilloscope rise time < 5.0 ns +15 v C6.0 v 1.0 k 37 50 1n916 1.0 k 200 ns C30 v to oscilloscope rise time < 5.0 ns input z o = 50 ? prf = 150 pps rise time < 2.0 ns p.w. < 200 ns input z o = 50 ? prf = 150 pps rise time < 2.0 ns p.w. < 200 ns figure 2. storage and fall time test circuit 2012- 0 willas electronic corp. dual general purpose transistor MMBT2907ADW1T1
i c , collector curren (ma) figure 3. dc current gain t j = 125c h fe , normalized current gain v ce , collectorC emitter voltage (volts) i c = C1.0 ma t r i b , base current (ma) figure 4. collector saturation region i c , collector current figure 5. turnCon time i c , collector current (ma) figure 6. turnCoff time t, time (ns) t, time (ns) 25c C55c v ce = C1.0 v v ce = C10 v C10 ma C100 ma C500 ma 2.0 v t d @ v be(off) = 0 v v cc = C30 v i c /i b = 10 t j = 25c t f t s = t s C 1/8 t f v cc = C30 v i c /i b = 10 i b1 = i b2 t j = 25c C0.005C0.01 C0.02 C0.03 C0.05 C0.7 C0.1 C0.2 C0.3 C0.5 C0.7 C1.0 C2.0 C3.0 C5.0 C7.0 C10 C20 C30 C50 C0.1 C0.2 C0.3 C0.5 C0.7 C1.0 C2.0 C3.0 C5.0 C7.0 C10 C20 C30 C50 C70 C100 C200 C300 C500 3.0 2.0 1.0 0.7 0.5 0.3 0.2 C1.0 C0.8 C0.6 C0.4 C0.2 0 C5.0C7.0 C10 C20 C30 C50 C70 C100 C200 C300 C500 300 200 100 70 50 30 20 10 7.0 5.0 3.0 C5.0C7.0 C10 C20 C30 C50 C70 C100 C200 C300 C500 300 200 100 70 50 30 20 10 7.0 5.0 3.0 typical characteristics 2012- 0 willas electronic corp. dual general purpose transistor MMBT2907ADW1T1
c eb typical smallCsignal characteristics noise figure v ce = 10 vdc, t a = 2 5 c nf, noise figure (db) f=1.0 khz 50 100 200 50 0 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k i c = C1.0 ma, r s = 430 ? C500 a, r s = 560 ? C50 a, r s = 2.7 k ? C100 a, r s = 1.6 k ? f, frequency (khz) figure 7. frequency effects r s , source resistance ( ? ) figure 8. source resistance effects reverse voltage (volts) figure 9. capacitances i c , collector current (ma) figure 10. currentCgain bandwidth product i c , collector current (ma) figure 11. on voltage i c , collector current (ma) figure 12. temperature coefficients t j = 25c f t , currentC gain bandwidth product (mhz) coefficient (mv/ c) r vb for v be i c = C50 a C100 a C500 a C1.0 ma r s =optimum source resistance C0.1 C0.2 C0.3 C0.5 C1.0 C2.0 C3.0 C5.0 C1 0 C20 C30 C1.0 C2.0 C5.0 C10 C20 C50 C100 C200 C500 C1000 C0.1 C0.2 C0.5 C1.0 C2.0 C5.0 C10 C20 C50 C100 C200 C500 +0.5 0 C0.5 C 1.0 C1.5 C2.0 C2.5 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 10 8.0 6.0 4.0 2.0 0 nf, noise figure (db) c cb 30 20 10 7.0 5.0 3.0 2.0 c, capacitance(pf) 400 300 200 100 80 60 40 30 20 v ce =C20 v t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = C10 v r vc for v ce(sat) C0.1 C0.2 C0.5 C1.0 C2.0 C5.0 C10 C 20 C50 C100 C200 C500 C1.0 C0.8 C0.6 C 0.4 C0.2 0 v, voltage (volts) 2012- 0 willas electronic corp. dual general purpose transistor MMBT2907ADW1T1
0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sot - 363 2012- 0 willas electronic corp. dual general purpose transistor MMBT2907ADW1T1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45)
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